CHARACTERIZATION OF AN IRRADIATED DOUBLE-SIDED SILICON STRIP DETECTORWITH FAST BINARY READOUT ELECTRONICS IN A PION BEAM

We report on the characterization of an AC-coupled, double-sided silic on strip detector, with fast binary readout electronics, in a pion bea m before and after proton irradiation. The proton irradiation was non- uniform and to increase the damage the detector was heated to accelera te the anti-annealing. The effective radiation level was about 1x10(14 ) p/cm(2). Both the bias voltage of the detector and the threshold of the discriminator of the binary readout electronics were varied, and t he efficiencies were determined. The irradiated detector clearly shows the effect of bulk inversion. The binary system proved to be efficien t well below the full depletion voltage on the p-n junction side. Due to the highly nonuniform irradiation, the depletion voltage changes fr om close to zero to about 120V along a single strip, but the detector appears to work without any noticeable failures.