ATOMIC-FORCE MICROSCOPY OBSERVATION OF THE FIRST STAGES OF DIAMOND GROWTH ON SILICON

Citation
G. Sanchez et al., ATOMIC-FORCE MICROSCOPY OBSERVATION OF THE FIRST STAGES OF DIAMOND GROWTH ON SILICON, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 592-597
Citations number
16
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
5
Issue
6-8
Year of publication
1996
Pages
592 - 597
Database
ISI
SICI code
0925-9635(1996)5:6-8<592:AMOOTF>2.0.ZU;2-V
Abstract
The first stages of diamond growth on scratched silicon substrates wer e studied by atomic force microscopy (AFM). Samples were obtained by b oth hot filament and microwave plasma CVD methods at short deposition times prior to coalescence. it was observed that, after an incubation time, diamond nanocrystals nucleated onto the scratches produced by di amond paste polishing. The Raman spectra of the crystals showed differ ent bands associated with several carbon phases. Simultaneous with dia mond growth, we detected an etching effect of the silicon surface attr ibuted to the atomic hydrogen present in the activated gas.