THERMAL-CONDUCTIVITY OF THIN DIAMOND FILMS GROWN FROM DC DISCHARGE

Citation
Je. Graebner et al., THERMAL-CONDUCTIVITY OF THIN DIAMOND FILMS GROWN FROM DC DISCHARGE, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 693-698
Citations number
20
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
5
Issue
6-8
Year of publication
1996
Pages
693 - 698
Database
ISI
SICI code
0925-9635(1996)5:6-8<693:TOTDFG>2.0.ZU;2-6
Abstract
The in-plane thermal conductivity of thin polycrystalline diamond film s produced in a d.c. discharge system has been measured by a contactle ss technique of transient thermal grating. Diamond films of different qualities but of the same thickness (11 mu m) were deposited from CH4/ H-2 mixtures at methane contents ranging from 2% to 10%. The highest t hermal conductivity k=9.5 W cm(-1) K-1 was found for the sample synthe sized at the lowest CH4 concentration (2%), the value of k smoothly de creasing to 1.2 W cm(-1) K-1 with increasing methane content. The obta ined results are in good agreement with previous measurements on simil ar films performed by the mirage technique. A correlation of thermal c onductivity with film morphology and phase content analyzed by SEM and Raman spectroscopy is discussed.