FORMATION OF PN JUNCTIONS BY BONDING OF GAAS LAYER ONTO DIAMOND

Authors
SUGINO T ITAGAKI T SHIRAFUJI J
Citation
T. Sugino et al., FORMATION OF PN JUNCTIONS BY BONDING OF GAAS LAYER ONTO DIAMOND, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 714-717
Citations number
14
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
5
Issue
6-8
Year of publication
1996
Pages
714 - 717
Database
ISI
SICI code
0925-9635(1996)5:6-8<714:FOPJBB>2.0.ZU;2-A
Abstract
Direct bonding of an n-GaAs thin film onto the surface of epitaxial p- diamond has been attempted. Prior to bonding, the diamond and GaAs sur faces were analyzed by X-ray photoelectron spectroscopy. A rectifying characteristic was obtained for the p-diamond/n-GaAs bonded junction s ystem. Moreover, the occurrence of a photovoltaic effect at the juncti on was observed under illumination with a AlGaAs laser operated at 789 nm. Thus a Diamond-GaAs pn junction can be formed by direct bonding.