PROPERTIES OF LI DOPED DIAMOND FILMS, OBTAINED BY TRANSMUTATION OF B-10 INTO LI-7

B-10 doped diamond films grown by hot filament chemical vapor depositi on were neutron irradiated for 4 weeks. The as-irradiated, and anneale d samples, along with unirradiated samples, were analyzed using Raman, cathodoluminescence, and electrical conductivity measurements. The fe asibility of the restoration of the quality of the irradiated films up on annealing was shown. The cathodoluminescence and electrical resisti vity measurements showed that donor centers are formed during annealin g in the irradiated samples. These donor levels may be Li atoms that m ove into interstitial sites of the lattice and become donors. The othe r possibility is the formation of donor levels owing to the interactio n of Li atoms with some lattice defects induced by neuron irradiation. Prime novelty: transmutation doping of diamond using reaction B-10 (n , alpha) Li-7.