This paper describes a procedure based on reactive ion etching develop
ed to reduce the surface roughness of CVD diamond thin films. The tech
nique involves etching a bilayer made up of diamond and a planarizing
SiO2 layer in an SF6-O-2 plasma mixture. Etching conditions have been
determined which yield equal rates for both diamond and the SiO2 cover
layer and favour the removal of diamond peaks. Smoothed surfaces have
been characterized by SEM, AFM and XPS: the results exhibit a signific
ant decrease in roughness. This novel technique offers promising prosp
ects for polishing thin diamond membranes for X-ray lithography applic
ations without the removal of significant amounts of diamond material.
The optical transmittance of diamond membranes, mainly affected by li
ght scattering due to surface roughness, is significantly improved usi
ng this method of planarization.