GROWTH AND CHARACTERIZATION OF SI-DOPED DIAMOND SINGLE-CRYSTALS GROWNBY THE HTHP METHOD

Authors
SITTAS G KANDA H KIFLAWI I SPEAR PM
Citation
G. Sittas et al., GROWTH AND CHARACTERIZATION OF SI-DOPED DIAMOND SINGLE-CRYSTALS GROWNBY THE HTHP METHOD, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 866-869
Citations number
15
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
5
Issue
6-8
Year of publication
1996
Pages
866 - 869
Database
ISI
SICI code
0925-9635(1996)5:6-8<866:GACOSD>2.0.ZU;2-8
Abstract
Synthetic diamond single crystals grown by the HTHP method were succes sfully doped with silicon. Various catalysts were used. The 1.68 eV Si centre was found only in specimens grown with N getters, and the best results were obtained with Fe-containing alloys. Photoluminescence fr om selected regions of the specimens showed that the presence of N exc ludes the presence of the Si centre and the intensity of the emission from the Si centre is not growth sector dependent.