ULTRAFAST RELAXATION OF FREE HOLES IN SEM ICONDUCTORS

Authors
LANGOT P DELFATTI N TOMMASI R VALLEE F
Citation
P. Langot et al., ULTRAFAST RELAXATION OF FREE HOLES IN SEM ICONDUCTORS, Annales de physique, 20(5-6), 1995, pp. 549-555
Citations number
27
Categorie Soggetti
Physics
Journal title
Annales de physique → ACNP
ISSN journal
00034169
Volume
20
Issue
5-6
Year of publication
1995
Pages
549 - 555
Database
ISI
SICI code
0003-4169(1995)20:5-6<549:UROFHI>2.0.ZU;2-6
Abstract
Recent investigations of the ultrafast nonequilibrium hole energy rela xation dynamics in intrinsic and doped semiconductors are reviewed. A particular emphasis is given to the selective study of hole thermaliza tion using specific two-color and infrared femtosecond absorption satu ration techniques and time-resolved luminescence techniques.