OPTOELECTRONIC CHARACTERIZATION OF CDTE P OLYCRYSTALS

Authors
BREUIL N BARTHELEMY A FROEHLY C ARIAUDO M REINEIX A JECKO B
Citation
N. Breuil et al., OPTOELECTRONIC CHARACTERIZATION OF CDTE P OLYCRYSTALS, Annales de physique, 20(5-6), 1995, pp. 629-630
Citations number
3
Categorie Soggetti
Physics
Journal title
Annales de physique → ACNP
ISSN journal
00034169
Volume
20
Issue
5-6
Year of publication
1995
Pages
629 - 630
Database
ISI
SICI code
0003-4169(1995)20:5-6<629:OCOCPO>2.0.ZU;2-8
Abstract
We have performed optoelectronic correlation measurements in a CdTe po lycristalline photoconductive switch for two wavelengths 810nm and 532 nm, like the method described by Shu [1]. The aim of this study is to calculate carrier lifetime and mobility of this material thanks to ult rafast electrical pulse generation and detection. We present experimen tal conditions and basic equations used to determin photoconductive fe atures.