DIFFERENT PHYSICAL SOURCES OF THE REFRACT IVE-INDEX VARIATION DURING PHOTODARKENING OF SEMICONDUCTOR-DOPED GLASSES

Authors
VANHAUDENARDEPEOCH A FREY R
Citation
A. Vanhaudenardepeoch et R. Frey, DIFFERENT PHYSICAL SOURCES OF THE REFRACT IVE-INDEX VARIATION DURING PHOTODARKENING OF SEMICONDUCTOR-DOPED GLASSES, Annales de physique, 20(5-6), 1995, pp. 653-654
Citations number
4
Categorie Soggetti
Physics
Journal title
Annales de physique → ACNP
ISSN journal
00034169
Volume
20
Issue
5-6
Year of publication
1995
Pages
653 - 654
Database
ISI
SICI code
0003-4169(1995)20:5-6<653:DPSOTR>2.0.ZU;2-Z
Abstract
The refractive index variations occuring in semiconductor doped glasse s are due to various sources of photo-induced static electric field. T hese contributions are calculated and compared in order to evaluate un der which experimental conditions, it is possible to obtain permanent memories in such materials.