HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/

The local atomic environment of the Sb dopant in 2 and 5X10(16) ions/c m(2) implanted Si samples has been studied by near grazing incidence f luorescence extended x-ray absorption fine structure at different stag es of the Sb deactivation process. The annealings were performed at hi gh temperature (900-1000 degrees C) during various periods: 30 s-4 h. The Sb out-diffusion and the high percentage of Sb precipitates are pu t into evidence especially for Sb-only implanted samples. The comparis on of the Sb and B codiffusion data with the corresponding ones obtain ed by the diffusion of Sb alone revealed several anomalous effects due to dopant interaction. Moreover, a simulation program including dopan t precipitation and donor-acceptor pairing allows us to foresee most o f the anomalous phenomena occurring in high-concentration codiffusion experiments. (C) 1996 American Institute of Physics.