ELECTRON CORRELATION-EFFECTS IN THICK RUO2 FILMS AT LIQUID-HELIUM TEMPERATURES

Citation
Cy. Wu et al., ELECTRON CORRELATION-EFFECTS IN THICK RUO2 FILMS AT LIQUID-HELIUM TEMPERATURES, Zhongguo wuli xuekan, 34(3), 1996, pp. 784-787
Citations number
8
Categorie Soggetti
Physics
Journal title
ISSN journal
05779073
Volume
34
Issue
3
Year of publication
1996
Part
1
Pages
784 - 787
Database
ISI
SICI code
0577-9073(1996)34:3<784:ECITRF>2.0.ZU;2-8
Abstract
We have measured the resistivities rho of two approximate to 3000-Angs trom thick RuO2 films between 0.3 and 10 K. As the temperature T is lo wered below 10 K, a resistivity rise varying with the square root of t emperature is observed. This rho behavior with T is well ascribed to e lectron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electr on-structure calculations for this material is performed.