We have measured the resistivities rho of two approximate to 3000-Angs
trom thick RuO2 films between 0.3 and 10 K. As the temperature T is lo
wered below 10 K, a resistivity rise varying with the square root of t
emperature is observed. This rho behavior with T is well ascribed to e
lectron-electron interaction effects in a three-dimensional disordered
metal. A quantitative comparison of the experiment with recent electr
on-structure calculations for this material is performed.