SURFACE-DIFFUSION AND SURFACE ATOMIC ROUGHNESS ON IR(001) SURFACE ANDTERRACES

Citation
Cl. Chen et al., SURFACE-DIFFUSION AND SURFACE ATOMIC ROUGHNESS ON IR(001) SURFACE ANDTERRACES, Applied surface science, 94-5, 1996, pp. 224-230
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
94-5
Year of publication
1996
Pages
224 - 230
Database
ISI
SICI code
0169-4332(1996)94-5:<224:SASARO>2.0.ZU;2-4
Abstract
Diffusion of iridium and rhenium on Ir(001) surfaces have been studied by field ion microscopy. Self-adsorbed iridium adatoms have been foun d to diffuse favorably along [100] directions by an atomic exchange-re placement mechanism. Rhenium adatoms force out one of four nearest nei ghboring iridium substrate atoms to form Re-Ir dimer vacancy complexes at similar to 240 K, which can change orientation by 90 degrees in th e temperature range from 210 to 280 K. The configuration of the Re-Ir dimer vacancy complex is considered to be the intermediate step of the atomic exchange-replacement diffusion mechanism. Unlike the diffusion of adatoms on the Ir(001) surface, ledge atoms on Ir(001) terraces di ffuse only along [110] steps at low temperatures by an ordinary atomic hopping diffusion mechanism. The diffusing ledge atom is trapped at o ne end of the step. The barrier potential that a trapped ledge atom ne eds to overcome for diffusing away from the trap is found to be 0.73 e V, which is about 0.11 eV higher than the barrier for a diffusing ledg e atom migrating along the step (0.62 eV). Surface step atoms start to dissociate from various sites randomly at similar to 1/6 of the melti ng temperature of iridium so that one-dimensional step roughening occu rs. By measuring the mean square deviation of the step heights at vari ous temperatures, the kink energy for the Ir(001) steps is found to be 1.36 eV.