RIGOROUS ANALYSIS OF CIRCUIT PARAMETER EXTRACTION FROM AN FDTD SIMULATION EXCITED WITH A RESISTIVE VOLTAGE-SOURCE

FDTD simulations excited with a resistive voltage source are under stu dy in this article. Focus is on the parasitic capacitance of the excit ation. It is shown that the resistance of the excitation is actually a frequency-dependent impedance. Because the resistive voltage source o perates as a current source, errors are generated to the generator vol tage of the excitation and, furthermore, to the extracted circuit para meters. Effective methods are presented to overcome this problem. (C) 1996 John Wiley & Sons, Inc.