DEPOSITION OF SILICON-CARBIDE FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors
RAMIREZ J SUHR H SZEPES L ZANATHY L NAGY A
Citation
J. Ramirez et al., DEPOSITION OF SILICON-CARBIDE FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of organometallic chemistry, 514(1-2), 1996, pp. 23-28
Citations number
28
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Inorganic & Nuclear
Journal title
Journal of organometallic chemistry → ACNP
ISSN journal
0022328X
Volume
514
Issue
1-2
Year of publication
1996
Pages
23 - 28
Database
ISI
SICI code
0022-328X(1996)514:1-2<23:DOSFBP>2.0.ZU;2-B
Abstract
Thin films of silicon carbide have been prepared by plasma enhanced ch emical vapour deposition using Si(Si(CH3)(3))(4) as a precursor. This compound is stable against moisture and air and has a high vapour pres sure. Furthermore, the compositions of the films prepared from this pr ecursor show very little dependence on the plasma parameters. Conseque ntly, this precursor is especially suited for practical applications o f hard coatings.