STUDIES ON SOME CHARACTERISTICS OF HEAVILY-DOPED N(-GAAS())N-GE HETEROJUNCTION STRUCTURES/

Authors
DE SS GHOSH AK PATTANAYAK TK BERA M HALDAR JC HAJRA AK GUHA S
Citation
Ss. De et al., STUDIES ON SOME CHARACTERISTICS OF HEAVILY-DOPED N(-GAAS())N-GE HETEROJUNCTION STRUCTURES/, Physica status solidi. a, Applied research, 155(1), 1996, pp. 279-285
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
155
Issue
1
Year of publication
1996
Pages
279 - 285
Database
ISI
SICI code
0031-8965(1996)155:1<279:SOSCOH>2.0.ZU;2-X
Abstract
A model for studying tile characteristics of heavily doped n(+)-GaAs/n -Ge heterojunction structures is developed through the use of a Poisso n-Boltzmann integral equation. The equation is used to investigate the nature of variation of conduction band/Fermi level separation with de pth. The changes of carrier concentration with depth are also computed .