Ss. De et al., STUDIES ON SOME CHARACTERISTICS OF HEAVILY-DOPED N(-GAAS())N-GE HETEROJUNCTION STRUCTURES/, Physica status solidi. a, Applied research, 155(1), 1996, pp. 279-285
A model for studying tile characteristics of heavily doped n(+)-GaAs/n
-Ge heterojunction structures is developed through the use of a Poisso
n-Boltzmann integral equation. The equation is used to investigate the
nature of variation of conduction band/Fermi level separation with de
pth. The changes of carrier concentration with depth are also computed
.