GROWTH AND CHARACTERIZATION OF DIAMOND FILM ON ALUMINUM NITRIDE

Authors
CUI JB MA YR ZHANG JF CHEN H FANG RC
Citation
Jb. Cui et al., GROWTH AND CHARACTERIZATION OF DIAMOND FILM ON ALUMINUM NITRIDE, Materials research bulletin, 31(7), 1996, pp. 781-785
Citations number
9
Categorie Soggetti
Material Science
Journal title
Materials research bulletin → ACNP
ISSN journal
00255408
Volume
31
Issue
7
Year of publication
1996
Pages
781 - 785
Database
ISI
SICI code
0025-5408(1996)31:7<781:GACODF>2.0.ZU;2-P
Abstract
Diamond films have been fabricated on aluminum nitride (AlN) ceramics by hot filament (HFCVD) method. High nucleation density of more than 1 0(9)/cm(2) can be obtained on AlN wafers by the pre-irradiation of hig h temperature filament in the hydrogen atmosphere. Thermal properties of the composites were measured by using photothermal deflection techn iques (PTD). Thermal diffusivity of diamond film/AlN depends on the qu ality and thickness of coated diamond films.