SILICON HETEROINTERFACE PHOTODETECTOR

Authors
HAWKINS AR REYNOLDS TE ENGLAND DR BABIC DI MONDRY MJ STREUBEL K BOWERS JE
Citation
Ar. Hawkins et al., SILICON HETEROINTERFACE PHOTODETECTOR, Applied physics letters, 68(26), 1996, pp. 3692-3694
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
26
Year of publication
1996
Pages
3692 - 3694
Database
ISI
SICI code
0003-6951(1996)68:26<3692:SHP>2.0.ZU;2-G
Abstract
We report the demonstration of an infrared avalanche photodetector tha t uses an InGaAs absorption layer and a Si avalanche multiplication la yer bonded by wafer fusion. Photocurrent measurements of the silicon h eterointerface photodetector showed high response to 1.3 mu m light an d gains of up to 130. Frequency response measurements for the detector s yielded 3 dB bandwidth products of up to 81 GHz. (C) 1996 American I nstitute of Physics.