TENSILE-STRAINED BARRIER GAASP GAAS SINGLE-QUANTUM-WELL LASERS/

Device characteristics of tensile-strained barrier AlGaAs/GaAs1-yPy/Ga As separate-confinement heterostructure single-quantum well (SCH-SQW) broad area lasers are reported. Three phosphorous compositions of 9%, 15%, and 22% were used for the tensile-strained GaAs1-yPy barrier. For a 1000 mu m long cavity device with a wellwidth of 113 Angstrom and 1 5% P in the barrier, the threshold current density was as low as 233 A /cm(2). The threshold current densities are slightly higher than those observed on similar device structures with tensile-strained GaAsP wel ls and unstrained GaAs wells with AlGaAs barriers. (C) 1996 American I nstitute of Physics.