ELECTRONIC-STRUCTURES OF POLYSILANES AND RELATED-COMPOUNDS

Authors
SEKI K ISHII H YUYAMA A WATANABE M FUKUI K ISHIGURO E YAMAZAKI J HASEGAWA S HORIUCHI K OHTA T ISAKA H FUJINO M FUJIKI M FURUKAWA K MATSUMOTO N
Citation
K. Seki et al., ELECTRONIC-STRUCTURES OF POLYSILANES AND RELATED-COMPOUNDS, Journal of electron spectroscopy and related phenomena, 78, 1996, pp. 403-406
Citations number
23
Categorie Soggetti
Spectroscopy
Journal title
Journal of electron spectroscopy and related phenomena → ACNP
ISSN journal
03682048
Volume
78
Year of publication
1996
Pages
403 - 406
Database
ISI
SICI code
0368-2048(1996)78:<403:EOPAR>2.0.ZU;2-T
Abstract
UPS and Si K- and L(II,III)-edge NEXAPS spectra of various polysilanes , poly(dimethylsiloxane), and octakis(t-butyl)octa-silacubane (OTBOSC) were measured for elucidating their occupied and vacant electronic st ructures, in comparison with the results for polysilazane. The results revealed that the electronic structures are sensitive for the main ch ain structure, pendant, and the dimensionality of the Si-containing ba ckbone.