DIODE LIKE BEHAVIOR OF AN ION-IRRADIATED POLYANILINE FILM

Authors
SRIVASTAVA MP MOHANTY SR ANNAPOORNI S RAWAT RS
Citation
Mp. Srivastava et al., DIODE LIKE BEHAVIOR OF AN ION-IRRADIATED POLYANILINE FILM, Physics letters. A, 215(1-2), 1996, pp. 63-68
Citations number
13
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
215
Issue
1-2
Year of publication
1996
Pages
63 - 68
Database
ISI
SICI code
0375-9601(1996)215:1-2<63:DLBOAI>2.0.ZU;2-0
Abstract
P-N junction diode formation has been achieved for the first time in a single polyaniline film, cation doped chemically on one side and anio n doped by irradiation of ions from dense plasma focus on the other si de. The diode behaviour is confirmed by I-V characteristics. The resul ts of ESCA, XRD and SEM for chemical composition, structure and surfac e morphology, respectively, are also reported for these films.