CONCENTRATION PROFILE AND GROWTH-RATE STUDIES OF IN1-XGAXP LPE BY COMPUTER-SIMULATION TECHNIQUE

Numerical simulation has been used to construct the concentration prof iles of Ga and P atoms in In-rich melt at successive equally spaced la yers in front of an InGaP crystal growing under normal conditions of l iquid phase epitaxy (LPE). The growth rate has been calculated using t he concentration gradient at the interface. The composition and the th ickness of the InGaP solid grown as a function of growth parameters, s uch as cooling rate, system temperature and time, have been studied. I t is observed that the thickness grown depends on the cooling rate, wh ereas the solid composition is independent of the cooling rate. The th eoretical findings of our model have been compared with experimentally reported values and the results are discussed in detail.