CHARACTERIZATION AND PHOTOVOLTAIC DEVICE APPLICATION OF DIP-COATED AND RAPID THERMAL ANNEALED CDS FILMS

Authors
JAYAKRISHNAN R NAIR JP KURUVILLA BA KULKARNI SK PANDEY RK
Citation
R. Jayakrishnan et al., CHARACTERIZATION AND PHOTOVOLTAIC DEVICE APPLICATION OF DIP-COATED AND RAPID THERMAL ANNEALED CDS FILMS, Journal of materials science. Materials in electronics, 7(3), 1996, pp. 193-199
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
7
Issue
3
Year of publication
1996
Pages
193 - 199
Database
ISI
SICI code
0957-4522(1996)7:3<193:CAPDAO>2.0.ZU;2-V
Abstract
The structure, composition, electronic and optical properties of dip-c oated CdS in the as-deposited condition and following rapid thermal an nealing have been Investigated. it has been shown that oxygen incorpor ated in the CdS film can be leached out following rapid thermal anneal ing. Strongly oriented CdS films with resistivity = 0.16 Omega cm and free electron concentration = 2.65 x 10(17) cm(-3) have been grown. Th in film heterojunction devices fabricated by non-aqueous electrodeposi tion of CdTe on a glass-ITO-CdS cathode have been shown to exhibit goo d rectification behaviour and photovoltaic activity.