GROWTH OF CUINSE2 BY METALLORGANIC CHEMICAL-VAPOR-DEPOSITION (MOCVD) - NEW COPPER PRECURSOR

Authors
DUCHEMIN S ARTAUD MC OUCHEN F BOUGNOT J POUGNET AM
Citation
S. Duchemin et al., GROWTH OF CUINSE2 BY METALLORGANIC CHEMICAL-VAPOR-DEPOSITION (MOCVD) - NEW COPPER PRECURSOR, Journal of materials science. Materials in electronics, 7(3), 1996, pp. 201-205
Citations number
28
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
7
Issue
3
Year of publication
1996
Pages
201 - 205
Database
ISI
SICI code
0957-4522(1996)7:3<201:GOCBMC>2.0.ZU;2-J
Abstract
Metallorganic chemical vapour deposition (MOCVD) of Cu-In-Se ternary c ompounds is performed in a horizontal reactor at atmospheric pressure. A copper precursor has been specially developed for this purpose and is used around room temperature. It is hexafluoroacetylacetonato coppe r mixed with trimethylamine (Cu(hfa)(2), NMe(3)). The other source mat erials are triethylindium (TEIn), trimethylindium (TMIn) and hydrogen selenide (H2Se). Experimental parameters are detailed and related to t he film composition. Properties of thin films are also investigated in the whole range of compositions obtained.