STRAIN COMPENSATED INGAAS-GAASP-INGAP LASER

The performance characteristics of InGaAs-GaAsP-InGaP strain compensat ed laser emitting near 1 mu m are reported, The ridge waveguide lasers have room temperature threshold current of 18 mA and differential qua ntum efficiency of 0.45 W/A/facet. The linewidth enhancement factor is smaller and gain coefficient is larger for these strain compensated l asers compared to that for conventional strained layer laser, This may be due to higher effective compressive strain in the light emitting l ayer of these devices which reduces the effective mass, The observed l arger gain coefficient is consistent with the measured larger relaxati on oscillation frequency of these lasers compared to that for a conven tional strained layer laser.