MULTIWAVELENGTH, DENSELY-PACKED 2X2 VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY FABRICATED USING SELECTIVE OXIDATION

Data are presented characterizing an individually addressable, multiwa velength 2 x 2 vertical-cavity surface-emitting laser array. The indiv idual elements are fabricated on center-to-center spacings of 12 mu m with the lasing wavelengths controlled through the selectively oxidize d lateral device sizes, Devices sized 3.5, 3.0, 2,5, and 2.0 mu m resu lt in lasing wavelengths of 9608, 9598, 9587, and 9574 Angstrom, respe ctively, Continuous wave threshold currents of the four elements with decreasing device sizes are 240, 214, 187, and 169 mu A, respectively.