POLARIZATION-INDEPENDENT AND ULTRA-HIGH BANDWIDTH ELECTROABSORPTION MODULATOR IN MULTI-QUANTUM-WELL DEEP-RIDGE WAVE-GUIDE TECHNOLOGY

Electroabsorption modulators with polarization-independence of transmi ssion (TE/TM sensitivity <0.4 dB at 1550 nm) over a wide wavelength ra nge from 1540-1560 nm have been realized using tensile-strained InGaAs and InGaAsP quantum wells, Both designs show 42-GHz modulation bandwi dth with a high bandwidth-to-drive-voltage ratio of >23 GHz/V, Polariz ation insensitivity of modulator transmission and chirp is demonstrate d, Technical realization has been done in ridge waveguide technology w ith low-pressure MOVPE, reactive ion etching (RIE) for semiconductor e tching and polyimide for planarization.