VERTICAL THIN-FILM-EDGE FIELD EMITTERS - FABRICATION BY CHEMICAL BEAMDEPOSITION, IMAGING OF CATHODOLUMINESCENCE AND CHARACTERIZATION OF EMISSION

Authors
Citation
Dsy. Hsu et Hf. Gray, VERTICAL THIN-FILM-EDGE FIELD EMITTERS - FABRICATION BY CHEMICAL BEAMDEPOSITION, IMAGING OF CATHODOLUMINESCENCE AND CHARACTERIZATION OF EMISSION, Thin solid films, 286(1-2), 1996, pp. 92-97
Citations number
11
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
286
Issue
1-2
Year of publication
1996
Pages
92 - 97
Database
ISI
SICI code
0040-6090(1996)286:1-2<92:VTFE-F>2.0.ZU;2-2
Abstract
We report the first fabrication of ungated vertical thin-film-edge fie ld emitters using chemical beam deposition techniques, and the first m easurement of field electron emission from arrays of such emitters. Th e deposition method has been shown to result in optimal material and s tructural film properties which are required for low voltage operation of thin-film-edge field emitters. These characteristics include an ex tremely small grain size, low stress, high purity, uniform thickness a nd a vertical geometry. We have imaged well-resolved emission patterns by cathodoluminescence using the field-emitted electrons, and have me asured well-behaved Fowler-Nordheim current-voltage characteristics. O ther advantages, such as robustness and inexpensive manufacturing, are also discussed.