CHARACTERIZATION OF GAAS BUFFER LAYER FUNCTION IN GAAS INP STRAINED STRUCTURE GROWN BY MBE/

For a GaAs/InP strained structure grown by MBE, the influence of the t hickness of the GaAs strained buffer layer on crystal quality was inve stigated and demonstrated. An X-ray diffractometer was used to measure the grown epitaxial layers. From experimental results, it was found t hat a thickness of strained layer was required to compensate the effec t of misfit dislocation due to the lattice mismatch between GaAs and t he InP substrate. The required thickness was deduced to be about 2 mu m.