PLASMA-DEPOSITED CDS LAYERS FROM (O-PHEN)BIS(DIETHYLDITHIOCARBAMATE) CADMIUM

Thin films of CdS were grown on different substrates by remote plasma- enhanced chemical vapour deposition from the novel precursor, volatile (o-phen)bis(diethyldithiocarbamate) cadmium (Cd[S2CN(C2H5)(2)](2) . C 12H8N2) Temperature dependence and thermodynamic parameters of its sat urated vapour pressure were obtained by the tensimetric flow method. G rown CdS films were transparent for visible light with 90-95% transmit tance and had a high resistivity (10(12)-10(13) Omega cm). II was esta blished by conventional X-ray analysis and synchrotron radiation in th e X-ray range that grown films have different structures dependent on the kind and orientation of the substrate. The mixture of polycrystall ine grains of hexagonal and cubic phases was observed in films on fuse d silica substrates. The polycrystalline hexagonal CdS was synthesized on (100) silicon substrates and the single cubic structure was grown on (100) InP.