THE OBSERVATION OF CO FILM OXIDATION ON SI AND SIO2 SUBSTRATES

The oxidation of Co film on Si and SiO2 substrates during heat treatme nt was investigated by TEM, HREM and XRD. The results show that the co balt oxide on Si and SiO2 substrates, annealed below 550 degrees C, is found to be CoO instead of Co3O4. Analysis showed that the annealing ambient affected the results. Oxidation of Co films also has an effect on the silicide formation at the Co/Si interface, and it leads to CoS i2 formation at a lower temperature than without oxidation. We also co nfirmed that CoO formed before annealing at 550 degrees C can complete ly change into silicide after further heating under vacuum at 900 degr ees C for 5 min.