SILICON THIN-FILMS OBTAINED BY RAPID THERMAL ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION

Epitaxial growth of silicon films over the temperature range from 900 to 1300 degrees C was investigated in a rapid thermal chemical vapour deposition reactor working at atmospheric pressure. The growth of boro n doped Si was performed from trichlorosilane and trichloroborine dilu ted in hydrogen. The epilayers were analysed by Rutherford backscatter ing spectroscopy, specular reflectance. scanning electron microscopy a nd Nomarski microscopy. Mechanisms for the observed growth rate are ex amined, and art: tied closely to the degree of surface cover?ge by Cl. The electrical properties of the deposited films were also checked us ing the spreading resistance and the four point probe techniques.