ON THE CONSTITUTION OF SOME GA-M-P SYSTEMS (WHERE M REPRESENTS CO, RH, IR, NI OR PT)

Phase equilibria are established in the GaP-rich regions of five Ga-M- P systems (where M represents Co, Rh, Ir, Ni, or Pt) at 700 degrees C (or 600 degrees C for the Ni-bearing sample) using X-ray diffraction a nalysis. The results of the present;study, in conjunction with previou s work on the Ga-Pd-P system, give a complete picture of phase equilib ria between GaP and the gallides and phosphides of the Co and Ni group s. Based on these data, it concluded that many binary metal gallides, including CoGa3, CoGa, Rh2Ga9, RhGa3, Rh10Ga17, RhGa, Ir2Ga9, IrGa3, N i2Ga3, PdGa, Pt3Ga7, PtGa2 and Pt2Ga3, may potentially serve as contac t materials for use in high-temperature GaP-based electronic devices.