30 GHZ BANDWIDTH, 1.55-MU-M MQW-DFB LASER-DIODE BASED ON A NEW MODULATION SCHEME

Authors
GOUTAIN E RENAUD JC KRAKOWSKI M RONDI D BLONDEAU R DECOSTER D
Citation
E. Goutain et al., 30 GHZ BANDWIDTH, 1.55-MU-M MQW-DFB LASER-DIODE BASED ON A NEW MODULATION SCHEME, Electronics Letters, 32(10), 1996, pp. 896-897
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
10
Year of publication
1996
Pages
896 - 897
Database
ISI
SICI code
0013-5194(1996)32:10<896:3GB1ML>2.0.ZU;2-4
Abstract
The authors present a new concept of modulation for a 1.55 mu m DFB MQ W laser diode allowing generation of millimetre waves. The method cons ists in modulating the saturable absorber of a two-section laser. The improvements brought by the new concept are evaluated theoretically an d have been verified experimentally for the first time. In particular, a 30 GHz cutoff frequency has been measured.