HIGH-POWER OPERATION OF INGAASP INP MULTIQUANTUM-WELL DFB LASERS AT 1.55-MU-M WAVELENGTH/

Authors
CHEN TR UNGAR J IANNELLI J OH S LUONG H BARCHAIM N
Citation
Tr. Chen et al., HIGH-POWER OPERATION OF INGAASP INP MULTIQUANTUM-WELL DFB LASERS AT 1.55-MU-M WAVELENGTH/, Electronics Letters, 32(10), 1996, pp. 898-898
Citations number
1
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
10
Year of publication
1996
Pages
898 - 898
Database
ISI
SICI code
0013-5194(1996)32:10<898:HOOIIM>2.0.ZU;2-C
Abstract
108 mW CW output power at room temperature has been realised in a stra ined multiquantum well InGaAsP/InP DFB laser al 1.55 mu m. The lasers also possess low threshold, current low intensity noise,and excellent high temperature behaviour with an output power of similar to 20 mW at 110 degrees C.