HIGH RESPONSIVITY A-SI-H BOTTOM-ELECTRODE METAL-SEMICONDUCTOR-METAL PHOTODETECTOR (BMSM-PD)

A novel simple bottom-electrode metal-semiconductor-metal photodetecto r (BMSM-PD) with an i-a-Si:H barrier layer and a phosphorus-doped n-a- Si:H light absorbing layer was used to improve the responsivity of MSM -PD. Ar a bias of 10V and an He-Ne laser incident power of 10 mu W, th e obtained n-a-Si:H BMSM-PD had a high responsivity of 10A/W, a low da rk current density of 2.35pA/mu m(2), and a spectral response peaked a t 605 nm.