LOW-POWERED HIGH-GAIN TRANSRESISTANCE BICMOS PULSE-AMPLIFIER

Authors
Citation
J. Wulleman, LOW-POWERED HIGH-GAIN TRANSRESISTANCE BICMOS PULSE-AMPLIFIER, Electronics Letters, 32(10), 1996, pp. 934-936
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
32
Issue
10
Year of publication
1996
Pages
934 - 936
Database
ISI
SICI code
0013-5194(1996)32:10<934:LHTBP>2.0.ZU;2-C
Abstract
A low-powered, high-gain amplifier for detector read out is discussed. The amplifier is fully balanced, differential and symmetrical in circ uit topology and layout, making it radiation tolerant and relatively i nsensitive to varying magnetic fields in the large detector. The circu it has a differential gain of 110 mv/4fC, an average 10/90% rise time of 19 ns, a noise figure of root(500(2)+100(2)) x C-t(1.08) electrons and a power consumption of 750 mu W. the circuit was implemented in th e radiation hard SOI BiCMOS technology of DMLL.