We report on the low-temperature resistivity rho(T) of AuFe spin-glass
wires with a thickness around 20 nm and a linewidth varying between 3
00 mu m and 150 nm. The observed linewidth dependence of rho(T) is due
to the contribution of the disorder-enhanced electron-electron intera
ction, while the spin-glass contribution is independent of linewidth.
However, a quantitative analysis of the rho(T) data reveals a substant
ial suppression of both the amplitude of the spin-glass resistivity an
d the interaction strength between magnetic impurities when compared t
o bulk AuFe alloys. This may indicate the presence of a size effect re
sulting from the finite spin-glass thickness.