O(N) TIGHT-BINDING METHODS WITH FINITE ELECTRONIC TEMPERATURE

Citation
Ap. Horsfield et Am. Bratkovsky, O(N) TIGHT-BINDING METHODS WITH FINITE ELECTRONIC TEMPERATURE, Physical review. B, Condensed matter, 53(23), 1996, pp. 15381-15384
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
53
Issue
23
Year of publication
1996
Pages
15381 - 15384
Database
ISI
SICI code
0163-1829(1996)53:23<15381:OTMWFE>2.0.ZU;2-Z
Abstract
The application to tight-binding O(N) methods of the approximation of Gillan [J. Phys. Condens. Matter 1, 689 (1989)] for estimating the ban d energy of a metal at an electron temperature of zero kelvin from the band free energy for electrons with a finite temperature is presented . The inclusion of the finite electron temperature improves convergenc e of the methods. Provided it is less than about 10% of the bandwidth, the error in the estimated energy compared with the true T=0 value is found to be less than 5% for titanium. The method is also found to gi ve useful estimates of the zero-temperature band energy for silicon, d iamond, and graphite. The calculated forces are tested on a molybdenum cluster.