We report on the observation of isolated, anisotropically confined ele
ctronic states of the type-I transition in (113)-grown, type-II GaAs/A
lAs superlattices. They are formed by fluctuations of the periodic int
erface corrugation. Electronic states related to the X conduction-band
minimum act, at elevated temperatures, as a transport channel to thes
e Gamma quantum boxes. The extremely narrow emission lines of the quan
tum boxes show an enhanced optical anisotropy compared to the luminesc
ence of the extended states, revealing the anisotropic nature of the l
ocalization sites. This is confirmed by a comparison of the experiment
al luminescence energy and anisotropy with the results of a multiband
k . p calculation for a quantum wire model system.