LASING IN NEON-LIKE SULFUR AND SILICON

Authors
LI YL LU PX PRETZLER G FILL EE
Citation
Yl. Li et al., LASING IN NEON-LIKE SULFUR AND SILICON, Optics communications, 133(1-6), 1997, pp. 196-200
Citations number
16
Categorie Soggetti
Optics
Journal title
Optics communications → ACNP
ISSN journal
00304018
Volume
133
Issue
1-6
Year of publication
1997
Pages
196 - 200
Database
ISI
SICI code
0030-4018(1997)133:1-6<196:LINSAS>2.0.ZU;2-Q
Abstract
We report lasing in neonlike sulphur and silicon using the prepulse te chnique on the Asterix iodine laser. In sulphur, lasing is observed at 60.1 and 60.8 nm on the 3d(1)P(1)-3p(1)P(1) and 3p(1)S(0)-3s(1)P(1) t ransitions, respectively. The drive energy for the 60.8 nm laser was s caled down to similar to 20 J. In silicon, lasing at 87.4 nm on the 3p (1)S(0)-3s(1)P(1) transitions was observed.