MONTE-CARLO SIMULATION OF THE CREATION OF EXCITED REGIONS IN INSULATORS BY A PHOTON

Citation
Ra. Glukhov et An. Vasilev, MONTE-CARLO SIMULATION OF THE CREATION OF EXCITED REGIONS IN INSULATORS BY A PHOTON, Radiation effects and defects in solids, 135(1-4), 1995, pp. 813-817
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
ISSN journal
10420150
Volume
135
Issue
1-4
Year of publication
1995
Pages
813 - 817
Database
ISI
SICI code
1042-0150(1995)135:1-4<813:MSOTCO>2.0.ZU;2-#
Abstract
Different approaches to solution of the kinetic equations for relaxati on of electronic excitations (analytical, numerical solution of integr o-differential equations, and Monte-Carlo simulation) display the prop erties and evolution of the excited region created by the absorption o f a high-energy photon. The relaxation at the final stages of inelasti c electron-electron scattering determines the number of low-energy exc itations in CeF3. The number of close excitations around a core hole i n BaF2 rapidly increases after the absorption of photons with energy a bove 32 eV, which results in a faster decay of crossluminescene.