M. Tachiki et al., OPTICAL CHARACTERIZATION OF SRM-3BI4TIMO3M-FILMS GROWN BY PULSED-LASER DEPOSITION METHOD(3 (M=4, 5, 6) THIN), JPN J A P 2, 35(6A), 1996, pp. 719-721
Srm-3Bi4TimO3m+3 (m = 4, 5, 6) thin films were grown on (100)MgO and (
100)Pt/(100)MgO substrates by the pulsed laser deposition (PLD) method
. X-ray diffraction (XRD) revealed c-axis-oriented crystal growth of e
ach Srm-3Bi4TimO3m+3 film. Reflection high-energy electron diffraction
(RHEED) from the films showed a streak pattern which indicates the ep
itaxial ordering of the fabricated thin films. Fundamental optical abs
orption of SrBi4Ti4O15, Sr2Bi4Ti5O18 and Sr3Bi4Ti6O21 films started at
3.4, 3.5 and 3.7 eV, respectively. Moreover, the Fourier transform in
frared (FTIR) spectra also revealed a systematic change in their LO-ph
onon absorption dip structure.