GEOMETRIC AND ELECTRONIC-STRUCTURE OF BINARY CLUSTERS CONTAINING SILICON ATOMS
Citation
K. Kaya et A. Nakajima, GEOMETRIC AND ELECTRONIC-STRUCTURE OF BINARY CLUSTERS CONTAINING SILICON ATOMS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 217, 1996, pp. 7-11
Categorie Soggetti
Material Science
SICI code
0921-5093(1996)217:<7:GAEOBC>2.0.ZU;2-D
Abstract
Binary clusters containing silicon atoms such as SinNam, SinCm and Sin
F were produced in a molecular beam using laser vaporization. The reac
tivity of SinNam toward NO adsorption was found to have an anti-correl
ation with the ionization energy of SinNam. The results of ab-initio c
alculation indicate that on doping with a sodium atom, the electron ch
arge migrates from the sodium atom to the silicon cluster without dist
urbing seriously the original framework of the silicon cluster. Photoe
lectron spectroscopy of silicon-sodium cluster anions was conducted us
ing a magnetic bottle type photoelectron spectrometer. The determined
electron affinity of SinNa was also found to have clear parallelism wi
th the ionization energy of Si-n clusters. This also confirms that the
parentage of the singly occupied molecular orbital (SOMO) of SinNa is
the lowest unoccupied molecular orbital (LUMO) of Si-n. In the case o
f SinF, the electron migrates from the silicon cluster to the fluorine
atom, which is reflected clearly in the photoelectron spectra of SinF
- clusters. The similarity of the photoelectron spectra of Sin-1C- and
Si-n(-) was attributed to the similarity of their geometric structure
(3 less than or equal to n less than or equal to 6). In contrast to t
his, Cn-1Si- and C-n(-) exhibit different photoelectron spectra, indic
ating the structural difference.