FACTORS AFFECTING THE QUANTIFICATION OF BORON IN SIO2 AND SI BY SPUTTERED NEUTRAL MASS-SPECTROMETRY

Boron implanted in SiO2 and Si is characterized using sputtered neutra l mass spectrometry (SNMS). Non-resonant, ultrahigh-intensity postioni zation finds that a fraction of boron not sputtered as neutral atoms f rom SiO2 and Si is partially present in the form of BO and BSi molecul es. Total boron detection is matrix sensitive. A deficit in the boron measured in SiO2 suggests that boron may go partially undetected due t o the substantial production of secondary ions during sputtering.