Ml. Wise et al., FACTORS AFFECTING THE QUANTIFICATION OF BORON IN SIO2 AND SI BY SPUTTERED NEUTRAL MASS-SPECTROMETRY, Surface and interface analysis, 24(6), 1996, pp. 371-374
Boron implanted in SiO2 and Si is characterized using sputtered neutra
l mass spectrometry (SNMS). Non-resonant, ultrahigh-intensity postioni
zation finds that a fraction of boron not sputtered as neutral atoms f
rom SiO2 and Si is partially present in the form of BO and BSi molecul
es. Total boron detection is matrix sensitive. A deficit in the boron
measured in SiO2 suggests that boron may go partially undetected due t
o the substantial production of secondary ions during sputtering.