SYNTHESIS OF CARBON NITRIDE THIN-FILMS BY VACUUM ARCS

Citation
If. Husein et al., SYNTHESIS OF CARBON NITRIDE THIN-FILMS BY VACUUM ARCS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 209(1-2), 1996, pp. 10-15
Citations number
23
Categorie Soggetti
Material Science
ISSN journal
09215093
Volume
209
Issue
1-2
Year of publication
1996
Pages
10 - 15
Database
ISI
SICI code
0921-5093(1996)209:1-2<10:SOCNTB>2.0.ZU;2-C
Abstract
Carbon nitride (CN) thin films were synthesized by combining vacuum ar cs and plasma ion implantation techniques. Three methods were investig ated: plasma ion implantation into carbon films deposited by anodic va cuum arcs (AAPII), continuous cathodic vacuum are with plasma ion impl antation (CAPII) and pulsed cathodic vacuum are (PCA). The films were found to be amorphous by X-ray diffraction (XRD). X-Ray photoelectron spectroscopy (XPS) and Raman spectroscopy analysis indicated the forma tion of C-N, C=N and C=N bonds. Calculations of the surface tension co mponents (dispersion and polar) of the films using the contact angle m easurement technique suggested the formation of covalent carbon-nitrog en bonds. The CN films exhibited improved adhesion relative to the pur e carbon films as indicated by adhesion calculations and the reduction in interfacial tension between the films and the substrate. A hardnes s of 18.9 Cpa was obtained by nanoindentation measurements for CN film s with an N/C ratio of 0.135.