Ys. Park et al., ENHANCEMENT OF DIAMOND THIN-FILM QUALITY BY A CYCLIC DEPOSITION METHOD UNDER MPECVD, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 209(1-2), 1996, pp. 414-419
Diamond thin films were deposited by a cyclic deposition method, which
can be carried out periodically on and off the methane gas flow in th
e CH4-H-2 system, using a microwave plasma enhanced chemical vapour de
position system. The property of diamond thin films deposited using th
e cyclic process was investigated and compared with that of the normal
process. The quality of the diamond films deposited by the cyclic pro
cess is better than that by the normal process under the same conditio
ns, although the growth rate of diamond film was lower in the cyclic p
rocess. However, introducing the interlayer on silicon substrate prior
to the cyclic process leads to the increase in the growth rate which
is comparable with that in the normal process while maintaining the sa
me high quality of the films.