INVESTIGATION OF THE NONRADIATIVE PROCESSES IN POROUS SILICON

Authors
AMATO G BOARINO L BRUNETTO N ROSSI AM PARISINI A
Citation
G. Amato et al., INVESTIGATION OF THE NONRADIATIVE PROCESSES IN POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 51-54
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
51 - 54
Database
ISI
SICI code
0040-6090(1996)276:1-2<51:IOTNPI>2.0.ZU;2-5
Abstract
The temperature (T) dependence of the yellow-red photoluminescence ban d is studied in the range from 300 K to 10 K. From the simultaneous in tensity and lifetime measurements it is possible to separate unambiguo usly the radiative and non-radiative components of the decay process. From the analysis of the non-radiative component a model is suggested in which potential barriers can confine excitons, limiting in this way the possible paths for non-radiative recombination.