AN IN-SITU METHOD OF MONITORING THE SURFACE-AREA OF POROUS SILICON

Authors
PETER LM RILEY DJ WIELGOSZ RI
Citation
Lm. Peter et al., AN IN-SITU METHOD OF MONITORING THE SURFACE-AREA OF POROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 61-64
Citations number
19
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
61 - 64
Database
ISI
SICI code
0040-6090(1996)276:1-2<61:AIMOMT>2.0.ZU;2-2
Abstract
A novel and convenient method of monitoring the internal surface area of porous silicon layers grown on either n-type or p-type silicon is d escribed. The method involves measurement of the interfacial capacitan ce under conditions where electrons accumulate at the electrode surfac e. The technique has been used to study the growth and leaching of por ous silicon layers in hydrofluoric acid/ethanol. The changes in the in terfacial capacitance have been related to the development of photolum inescence.