X-RAY-DIFFRACTION INVESTIGATION OF POROUS SILICON SUPERLATTICES

Citation
D. Buttard et al., X-RAY-DIFFRACTION INVESTIGATION OF POROUS SILICON SUPERLATTICES, Thin solid films, 276(1-2), 1996, pp. 69-72
Citations number
14
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
276
Issue
1-2
Year of publication
1996
Pages
69 - 72
Database
ISI
SICI code
0040-6090(1996)276:1-2<69:XIOPSS>2.0.ZU;2-0
Abstract
High-resolution X-ray diffraction has been used for the structural cha racterization of thin single porous silicon (PS) layers and superlatti ces. Thin PS layers, in the range of 100-1000 nm, exhibit several thic kness interfringes, giving evidence for the lateral homogeneity of the layer thickness. For PS superlattices, several satellite reflections are visible in the diffraction pattern. The analysis of these experime ntal results using simulations allows us to deduce structural informat ion of this new kind of silicon heterostructure.