High-resolution X-ray diffraction has been used for the structural cha
racterization of thin single porous silicon (PS) layers and superlatti
ces. Thin PS layers, in the range of 100-1000 nm, exhibit several thic
kness interfringes, giving evidence for the lateral homogeneity of the
layer thickness. For PS superlattices, several satellite reflections
are visible in the diffraction pattern. The analysis of these experime
ntal results using simulations allows us to deduce structural informat
ion of this new kind of silicon heterostructure.